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BSP250-VB Datasheet
Datasheet specifications
| Datasheet's name | BSP250-VB |
|---|---|
| File size | 75.829 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet BSP250-VB |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec BSP250-VB
- Power Dissipation (Pd): -
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): 35V
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): 6.2A
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,6.2A
- Package: SOT-223
- Manufacturer: VBsemi Elec
